Engström, Olof: search on Z-Library

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1

Energy concepts of insulator–semiconductor interface traps

Engström, Olof, Alm, Anders

Journal:

Journal of Applied Physics

Year:

1983

Language:

english

File:

PDF, 497 KB

english, 1983

2

Electron energy states at the interface between semi-insulating polycrystalline silicon and crystalline silicon

Liss, Bo, Engström, Olof

Journal:

Journal of Applied Physics

Year:

1995

Language:

english

File:

PDF, 1.29 MB

english, 1995

3

Discrete conductance fluctuations in silicon emitter junctions due to defect clustering and evidence for structural changes by high-energy electron irradiation and annealing

Andersson, Gert I., Andersson, Mats O., Engström, Olof

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 1.82 MB

english, 1992

4

The bonded unipolar silicon-silicon junction

Bengtsson, Stefan, Andersson, Gert I., Andersson, Mats O., Engström, Olof

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 2.42 MB

english, 1992

5

ECS Transactions [ECS 218th ECS Meeting - Las Vegas, NV (October 10 - October 15, 2010)] - (Invited) Multiparameter Admittance Spectroscopy

Engström, Olof, Raeissi, Bahman

Year:

2010

Language:

english

File:

PDF, 6.08 MB

english, 2010

6

Defect clustering in silicon emitter junctions

Andersson, Gert I., Engström, Olof

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 926 KB

english, 1990

7

Response to “Comment on ‘A model for internal photoemission at high-k oxide/silicon energy barriers’” [J. Appl. Phys. 113, 166101 (2013)]

Engström, Olof

Journal:

Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 404 KB

english, 2013

8

Magnetic and Electron Spin Relaxation Properties of (GdxY1−x)2O3 (0 ≤ x ≤ 1) Nanoparticles Synthesized by the Combustion Method. Increased Electron Spin Relaxation Times with Increasing Yttrium Content

Gustafsson, Håkan, Ahrén, Maria, Söderlind, Fredrik, Córdoba Gallego, José M., Käll, Per-Olov, Nordblad, Per, Westlund, Per-Olof, Uvdal, Kajsa, Engström, Maria

Journal:

The Journal of Physical Chemistry C

Year:

2011

Language:

english

File:

PDF, 1.05 MB

english, 2011

9

Deep-level transient spectroscopy: Increased accuracy of interpretation of silicon/silicon dioxide interface state data by the assistance of computer simulations

Ricksand, Anders, Engström, Olof

Journal:

Journal of Applied Physics

Year:

1991

Language:

english

File:

PDF, 1.72 MB

english, 1991

10

Steady-state and transient current transport in undoped polycrystalline diamond films

Jauhiainen, Anders, Bengtsson, Stefan, Engström, Olof

Journal:

Journal of Applied Physics

Year:

1997

Language:

english

File:

PDF, 462 KB

english, 1997

11

Novel hydrogen-gold-related deep acceptor in n-type silicon

Sveinbjörnsson, Einar Ö., Engström, Olof

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 665 KB

english, 1992

12

Scanned light pulse technique for the investigation of insulator–semiconductor interfaces

Engström, Olof, Carlsson, Annelie

Journal:

Journal of Applied Physics

Year:

1983

Language:

english

File:

PDF, 706 KB

english, 1983

13

Thermally activated capture of charge carriers into irradiation induced Si/SiO2 interface states

Ricksand, Anders, Engström, Olof

Journal:

Journal of Applied Physics

Year:

1991

Language:

english

File:

PDF, 980 KB

english, 1991

14

[ECS 210th ECS Meeting - Cancun, Mexico (October 29-November 3, 2006)] ECS Transactions - Relation Between Electrical and Mechanical Characteristics of Low-Temperature Bonded Si/Si Interfaces

Raeissi, Bahman, Sanz-Velasco, Anke, Engström, Olof

Year:

2006

Language:

english

File:

PDF, 342 KB

english, 2006

15

Protein Flexibility and Conformational Entropy in Ligand Design Targeting the Carbohydrate Recognition Domain of Galectin-3

Diehl, Carl, Engström, Olof, Delaine, Tamara, Håkansson, Maria, Genheden, Samuel, Modig, Kristofer, Leffler, Hakon, Ryde, Ulf, Nilsson, Ulf J., Akke, Mikael

Journal:

Journal of the American Chemical Society

Year:

2010

Language:

english

File:

PDF, 3.22 MB

english, 2010

16

Forward-bias tunneling at defect clusters in silicon emitter junctions

Andersson, Gert I., Engström, Olof

Journal:

Journal of Applied Physics

Year:

1991

Language:

english

File:

PDF, 1.30 MB

english, 1991

17

ECS Transactions [ECS 219th ECS Meeting - Montreal, QC, Canada (May 1 - May 6, 2011)] - Electron States in MOS Systems

Engström, Olof

Year:

2011

Language:

english

File:

PDF, 1.31 MB

english, 2011

18

Electrical Characterization of Bonding Interfaces

Engström, Olof

Journal:

Journal of The Electrochemical Society

Year:

1992

Language:

english

File:

PDF, 1.04 MB

english, 1992

19

A deep-level transient spectroscopy technique for the characterization of charge-carrier emission centers in nonabrupt p-n junctions

Andersson, Gert I., Engström, Olof

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 1.42 MB

english, 1990

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